NCE60P04Y
FEATURES
- Isolated Package
- High Voltage Isolation = 2.5 k VRMS (t = 60 s; f = 60 Hz)
- Sink to Lead Creepage Distance = 4.8 mm
- P-Channel
- 175 °C Operating Temperature
- Dynamic d V/dt Rating
- Low Thermal Resistance
- Lead (Pb)-free Available
Available
Ro HS-
PLIANT
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc
VGS at
- 10 V
TC = 25 °C TC = 100 °C
TC = 25 °C
VDS VGS
EAS IAR EAR PD d V/dt
Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD =
- 25 V, starting TJ = 25...
