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GTRB267008FC Thermally-Enhanced High Power RF GaN on SiC HEMT

GTRB267008FC Description

GTRB267008FC Thermally-Enhanced High Power RF GaN on SiC HEMT 620 W, 48 V, 2496 * 2690 MHz .
The GTRB267008FC is a 620-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applicati.

GTRB267008FC Features

* high efficiency, and a thermally-enhanced package with earless flange. Package Type: H-37248KC-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 1000 mA, VGS(PEAK) = -4.8 V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Eff

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Datasheet Details

Part number
GTRB267008FC
Manufacturer
MACOM
File Size
1.82 MB
Datasheet
GTRB267008FC-MACOM.pdf
Description
Thermally-Enhanced High Power RF GaN on SiC HEMT

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Thermally-Enhanced High Power GaN SiC HEMT MACOM
MACOM GTRB267008FC-like datasheet