Datasheet Specifications
- Part number
- GTRB267008FC
- Manufacturer
- MACOM
- File Size
- 1.82 MB
- Datasheet
- GTRB267008FC-MACOM.pdf
- Description
- Thermally-Enhanced High Power RF GaN on SiC HEMT
Description
GTRB267008FC Thermally-Enhanced High Power RF GaN on SiC HEMT 620 W, 48 V, 2496 * 2690 MHz .
Features
* high efficiency, and a thermally-enhanced package with earless flange. Package Type: H-37248KC-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 1000 mA, VGS(PEAK) = -4.8 V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 EffGTRB267008FC Distributors
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