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GTRB264318FC Thermally-Enhanced High Power RF GaN on SiC HEMT

GTRB264318FC Description

GTRB264318FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 2500 * 2700 MHz .
The GTRB264318FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applicati.

GTRB264318FC Features

* internal matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VCC = 48 V, IDQ = 150 mA, VGS(PEAK) =
* 5.6 V, ƒ = 2690 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 M

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Datasheet Details

Part number
GTRB264318FC
Manufacturer
MACOM
File Size
520.53 KB
Datasheet
GTRB264318FC-MACOM.pdf
Description
Thermally-Enhanced High Power RF GaN on SiC HEMT

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Thermally-Enhanced High Power GaN SiC HEMT MACOM
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