Datasheet4U Logo Datasheet4U.com

GTRB224402FC Thermally-Enhanced High Power RF GaN on SiC HEMT

GTRB224402FC Description

GTRB224402FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 2110 * 2200 MHz .
The GTRB224402FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier.

GTRB224402FC Features

* high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 750 mA, VGS(PEAK) = -5.15 V, ƒ = 2200 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 20 4

📥 Download Datasheet

Preview of GTRB224402FC PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
GTRB224402FC
Manufacturer
MACOM
File Size
915.41 KB
Datasheet
GTRB224402FC-MACOM.pdf
Description
Thermally-Enhanced High Power RF GaN on SiC HEMT

📁 Related Datasheet

  • GTR210 - Gastransmitter (ADOS)
  • GTRA184602FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
  • GTRA262802FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
  • GTRA263902FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
  • GTRA360502M - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
  • GTRA362002FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
  • GTRA364002FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
  • GTRA374902FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)

📌 All Tags

Thermally-Enhanced High Power GaN SiC HEMT MACOM
MACOM GTRB224402FC-like datasheet