GTRB204402FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

MACOM

GTRB204402FC Datasheet Preview — Preview of GTRB204402FC PDF

Datasheet Details

Part number	GTRB204402FC
Manufacturer	MACOM
File Size	904.05 KB
Description	Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet	GTRB204402FC-MACOM.pdf

GTRB204402FC Product details

Description

The GTRB204402FC/1 is a 350-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.

Features

high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 150 mA, VGS(Peak) = -5.5 V, ƒ = 2020 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 40 35 30 25 20 15 10 5 0 25 80 Efficiency 60 40 20 Gain 0 -20 -40 PAR @ 0.01% CCDF -60 GTRB204402FC_g1 -80 30 35 40 45 50 55 Average Output Power (dBm) Features.
GaN on SiC HEMT technology.

📁 GTRB204402FC Similar Datasheet

GTR210 - Gastransmitter (ADOS)
GTRA184602FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
GTRA262802FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
GTRA263902FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
GTRA360502M - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
GTRA362002FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
GTRA364002FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
GTRA374902FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)

Other Datasheets by MACOM

GTRB206002FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRB224402FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRB264318FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRB266908FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRB267008FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRB424908FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

Published: May 13, 2024 |