GTRB266908FC Thermally-Enhanced High Power RF GaN on SiC HEMT

MACOM

Description

GTRB266908FC Thermally-Enhanced High Power RF GaN on SiC HEMT 630 W, 48 V, 2515 * 2675 MHz .
The GTRB266908FC is a 630-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier.

📥 Download Datasheet

GTRB266908FC Datasheet Preview — Preview of GTRB266908FC PDF

Datasheet Specifications

Part number: GTRB266908FC
Manufacturer: MACOM
File Size: 893.10 KB
Datasheet: GTRB266908FC-MACOM.pdf
Description: Thermally-Enhanced High Power RF GaN on SiC HEMT

Features

* high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 PN: GTRB266908FC Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 1000 mA, VGS(Peak) = -4.7 V, ƒ = 2675 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 M

GTRB266908FC Distributors

📁 Related Datasheet

GTR210 GTRA184602FC GTRA262802FC GTRA263902FC GTRA360502M GTRA362002FC

📌 All Tags

GTRB266908FC Thermally-Enhanced High Power GaN SiC HEMT MACOM

MACOM GTRB266908FC-like datasheet