CG2H40120 Datasheet (MACOM) - 28V RF Power GaN HEMT

CG2H40120, 28V RF Power GaN HEMT

The CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CG2H40120, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capab

CG2H40120 Features

* Up to 2.5 GHz Operation

* 20 dB Small Signal Gain at 1.0 GHz

* 15 dB Small Signal Gain at 2.0 GHz

* 130 W Typical PSAT

* 70% Efficiency at PSAT

* 28 V Operation Applications

* 2-Way Private Radio

* Broadband Amplifiers

* Test