CG2H30070F Datasheet (MACOM) - RF Power GaN HEMT

CG2H30070F, RF Power GaN HEMT

The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT).

The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandw

CG2H30070F Features

* 0.5 - 3.0 GHz application circuit

* 85 W POUT typical at 28 V

* 10 dB power gain

* 58% drain efficiency

* Internally matched Applications

* Broadband amplifiers

* Electronic counter measures

* Signal jamming

* Milcom