Datasheet4U Logo Datasheet4U.com

CG2H40035 - RF Power GaN HEMT

Description

Wolfspeed’s CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Features

  • Up to 6 GHz Operation.
  • 40 W typical PSAT.
  • 64% Efficiency at PSAT.
  • 14 dB Small Signal Gain at 3.5 GHz.
  • 28 V Operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CG2H40010 RF Power GaN HEMT MACOM
CG2H40010 RF Power GaN HEMT CREE
CG2H40025 RF Power GaN HEMT CREE
CG2H40025 RF Power GaN HEMT MACOM
CG2H40045 RF Power GaN HEMT MACOM

Other Datasheets by Wolfspeed

Part Number Description
CG2H40025 28V RF Power GaN HEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CG2H40035 35 W, DC - 6 GHz, RF Power GaN HEMT Description Wolfspeed’s CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40035 ideal for linear and compressed amplifier circuits. The transistor is available in both a screw-down, flange package and solder-down, pill package. Package Types: 440196 & 440166 PNs: CG2H40035P & CG2H40035F Features • Up to 6 GHz Operation • 40 W typical PSAT • 64% Efficiency at PSAT • 14 dB Small Signal Gain at 3.
Published: |