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CG2H40045 - RF Power GaN HEMT

Description

The CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CG2H40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Features

  • Up to 4 GHz Operation.
  • 18 dB Small Signal Gain at 2.0 GHz.
  • 14 dB Small Signal Gain at 4.0 GHz.
  • 55 W Typical PSAT.
  • 60% Efficiency at PSAT.
  • 28 V Operation.

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Full PDF Text Transcription

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CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Description The CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40045 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package. Package Types: 440206 & 440223 PNs: CG2H40045P & CG2H40045F Features • Up to 4 GHz Operation • 18 dB Small Signal Gain at 2.0 GHz • 14 dB Small Signal Gain at 4.
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