CG2H40045 Datasheet (MACOM) - RF Power GaN HEMT

CG2H40045, RF Power GaN HEMT

The CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CG2H40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capab

CG2H40045 Features

* Up to 4 GHz Operation

* 18 dB Small Signal Gain at 2.0 GHz

* 14 dB Small Signal Gain at 4.0 GHz

* 55 W Typical PSAT

* 60% Efficiency at PSAT

* 28 V Operation Applications

* 2-Way Private Radio

* Broadband Amplifiers

* Cellula