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CG2H40035 - RF Power GaN HEMT

General Description

Wolfspeed’s CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Key Features

  • Up to 6 GHz Operation.
  • 40 W typical PSAT.
  • 64% Efficiency at PSAT.
  • 14 dB Small Signal Gain at 3.5 GHz.
  • 28 V Operation.

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Full PDF Text Transcription for CG2H40035 (Reference)

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CG2H40035 35 W, DC - 6 GHz, RF Power GaN HEMT Description Wolfspeed’s CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H4...

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lium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40035 ideal for linear and compressed amplifier circuits. The transistor is available in both a screw-down, flange package and solder-down, pill package. Package Types: 440196 & 440166 PNs: CG2H40035P & CG2H40035F Features • Up to 6 GHz Operation • 40 W typical PSAT • 64% Efficiency at PSAT • 14 dB Small Signal Gain at 3.

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