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CG2H40120 - 28V RF Power GaN HEMT

General Description

The CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CG2H40120, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Key Features

  • Up to 2.5 GHz Operation.
  • 20 dB Small Signal Gain at 1.0 GHz.
  • 15 dB Small Signal Gain at 2.0 GHz.
  • 130 W Typical PSAT.
  • 70% Efficiency at PSAT.
  • 28 V Operation.

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Other Datasheets by MACOM Technology Solutions

Part Number Description
CG2H40010 RF Power GaN HEMT
CG2H40025 RF Power GaN HEMT
CG2H40045 RF Power GaN HEMT
CG2H30070F RF Power GaN HEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CG2H40120 120 W, 28 V, RF Power GaN HEMT Description The CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40120, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40120 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package. Package Types: 440206 and 440223 PNs: CG2H40120P and CG2H40120F Features • Up to 2.5 GHz Operation • 20 dB Small Signal Gain at 1.0 GHz • 15 dB Small Signal Gain at 2.