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IRGP6690D-EPbF, IRGP6690DPbF Insulated Gate Bipolar Transistor

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Description

VCES = 600V IC = 90A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ.= 1.65V @ IC = 75A Applications * Welding * H Bridge Converter.

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This datasheet PDF includes multiple part numbers: IRGP6690D-EPbF, IRGP6690DPbF. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRGP6690D-EPbF, IRGP6690DPbF
Manufacturer
International Rectifier
File Size
637.51 KB
Datasheet
IRGP6690DPbF-InternationalRectifier.pdf
Description
Insulated Gate Bipolar Transistor
Note
This datasheet PDF includes multiple part numbers: IRGP6690D-EPbF, IRGP6690DPbF.
Please refer to the document for exact specifications by model.

Applications

* Welding

IRGP6690D-EPbF Distributors

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International Rectifier IRGP6690D-EPbF-like datasheet