IRGP6690D-EPbF Features
* Low VCE(ON) and switching losses Optimized diode for full bridge hard switch converters Square RBSOA and maximum junction temperature 175°C 5µs short circuit SOA Positive VCE (ON) temperature coefficient Lead-free, RoHS compliant Benefits High efficiency in a wide range of applications Optimized fo
IRGP6690DPbF-InternationalRectifier.pdf
Datasheet Details
IRGP6690D-EPbF, IRGP6690DPbF
International Rectifier
637.51 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGP6690D-EPbF, IRGP6690DPbF.
Please refer to the document for exact specifications by model.
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IRGP6690D-EPbF Distributor
