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IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR

IRGP20B120UD-E Description

PD- 93817 IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRGP20B120UD-E Features

* UltraFast Non Punch Through (NPT) Technology
* Low Diode VF (1.67V Typical @ 20A & 25°C)
* 10 µs Short Circuit Capability
* Square RBSOA
* UltraSoft Diode Recovery Characteristics
* Positive VCE(on) Temperature Coefficient
* Extended Lead TO-

IRGP20B120UD-E Applications

* Rugged with UltraFast Performance
* Low EMI
* Significantly Less Snubber Required
* Excellent Current Sharing in Parallel Operation
* Longer Leads for Easier Mounting TO-247AD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM I

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Datasheet Details

Part number
IRGP20B120UD-E
Manufacturer
IRF
File Size
148.42 KB
Datasheet
IRGP20B120UD-E_IRF.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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