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IRGP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR

IRGP30B120KD-E Description

PD- 93818 IRGP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRGP30B120KD-E Features

* Low VCE(on) Non Punch Through (NPT) Technology
* Low Diode VF (1.76V Typical @ 25A & 25°C)
* 10 µs Short Circuit Capability
* Square RBSOA
* Ultrasoft Diode Recovery Characteristics
* Positive VCE(on) Temperature Coefficient
* Extended Lead T

IRGP30B120KD-E Applications

* Rugged Transient Performance
* Low EMI
* Significantly Less Snubber Required
* Excellent Current Sharing in Parallel Operation
* Longer leads for Easier Mounting TO-247AD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ T

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Datasheet Details

Part number
IRGP30B120KD-E
Manufacturer
IRF
File Size
132.39 KB
Datasheet
IRGP30B120KD-E_IRF.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR IRF
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