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IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR

IRGP20B120U-E Description

PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR .

IRGP20B120U-E Features

* UltraFast Non Punch Through (NPT) Technology
* 10 µs Short Circuit capability
* Square RBSOA
* Positive VCE(on) Temperature Coefficient
* Extended lead TO-247 package UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 3.05V VGE = 15V, IC = 20A, 25°C Benefi

IRGP20B120U-E Applications

* Rugged with UltraFast performance
* Low EMI
* Significantly Less Snubber required
* Excellent Current sharing in Parallel operation
* Longer leads for easier mounting n-channel TO-247AD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°

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Datasheet Details

Part number
IRGP20B120U-E
Manufacturer
IRF
File Size
106.35 KB
Datasheet
IRGP20B120U-E_IRF.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR IRF
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