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IRGP6630DPbF Insulated Gate Bipolar Transistor

International Rectifier

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Description

VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C tSC .

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Datasheet Specifications

Part number: IRGP6630DPbF
Manufacturer: International Rectifier
File Size: 673.85 KB
Datasheet: IRGP6630DPbF-InternationalRectifier.pdf
Description: Insulated Gate Bipolar Transistor

Applications

*  Welding

IRGP6630DPbF Distributors

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IRGP6630DPbF Insulated Gate Bipolar Transistor International Rectifier

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