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IRGP6660D-EPbF, IRGP6660DPBF Insulated Gate Bipolar Transistor

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Description

VCES = 600V IC = 60A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ.= 1.7V @ IC = 48A Applications * Welding * H Bridge Converters.

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This datasheet PDF includes multiple part numbers: IRGP6660D-EPbF, IRGP6660DPBF. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRGP6660D-EPbF, IRGP6660DPBF
Manufacturer
International Rectifier
File Size
654.02 KB
Datasheet
IRGP6660DPBF-InternationalRectifier.pdf
Description
Insulated Gate Bipolar Transistor
Note
This datasheet PDF includes multiple part numbers: IRGP6660D-EPbF, IRGP6660DPBF.
Please refer to the document for exact specifications by model.

Applications

* Welding

IRGP6660D-EPbF Distributors

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