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IRGP6630D-EPbF, IRGP6630DPbF Insulated Gate Bipolar Transistor

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Description

  VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C C tSC .

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This datasheet PDF includes multiple part numbers: IRGP6630D-EPbF, IRGP6630DPbF. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRGP6630D-EPbF, IRGP6630DPbF
Manufacturer
International Rectifier
File Size
673.85 KB
Datasheet
IRGP6630DPbF-InternationalRectifier.pdf
Description
Insulated Gate Bipolar Transistor
Note
This datasheet PDF includes multiple part numbers: IRGP6630D-EPbF, IRGP6630DPbF.
Please refer to the document for exact specifications by model.

Applications

*  Welding

IRGP6630D-EPbF Distributors

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