IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGP4069D-EPbF .

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Datasheet Specifications

Part number: IRGP4069DPbF
Manufacturer: International Rectifier
File Size: 303.95 KB
Datasheet: IRGP4069DPbF-InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (ON) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction Temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA
* 100% of The Parts Tested for ILM
* Positive VCE (ON) Temperature Coefficient
* Tight Parameter

Applications

* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Transient Performance for Increased Reliability
* Excellent Current Sharing in Parallel Operation Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100

IRGP4069DPbF Distributors

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IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGP4069DPbF-like datasheet