IRGP450U - INSULATED GATE BIPOLAR TRANSISTOR

IRF

IRGP450U Datasheet Preview — Preview of IRGP450U PDF

Datasheet Details

Part number	IRGP450U
Manufacturer	IRF
File Size	260.47 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP450U_IRF.pdf

IRGP450U Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 500V VCE(sat) ≤ 3.2V @VGE = 15V, I C = 33A n-channel.

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Published: Aug 23, 2005 |