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IRGP4062DPBF, IRGB4062DPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGP4062DPBF Description

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRGP4062DPBF Features

* C
* Low VCE (ON) Trench IGBT Technology
* Low switching losses
* Maximum Junction temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA G
* 100% of the parts tested for ILM 
* Positive VCE (ON) Temperature co-efficient
* Ult

IRGP4062DPBF Applications

* Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
* Rugged transient Performance for increased reliability
* Excellent Current sharing in parallel operation
* Low EMI E GC TO-220AB IRGB4062DPbF G Gate E GC E GC TO-24

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRGP4062DPBF, IRGB4062DPBF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRGP4062DPBF, IRGB4062DPBF
Manufacturer
International Rectifier
File Size
430.21 KB
Datasheet
IRGB4062DPBF_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRGP4062DPBF, IRGB4062DPBF.
Please refer to the document for exact specifications by model.

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📌 All Tags

INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRGP4062DPBF-like datasheet