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IRGP4063-EPBF, IRGP4063PBF INSULATED GATE BIPOLAR TRANSISTOR

IRGP4063-EPBF Description

PD - 97404 INSULATED GATE BIPOLAR TRANSISTOR .

IRGP4063-EPBF Features

* Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) Temperature co-efficient Tig

IRGP4063-EPBF Applications

* Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
* Rugged transient Performance for increased reliability
* Excellent Current sharing in parallel operation
* Low EMI C GC E TO-247AC IRGP4063PbF E GC TO-247AD IRGP40

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRGP4063-EPBF, IRGP4063PBF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRGP4063-EPBF, IRGP4063PBF
Manufacturer
International Rectifier
File Size
274.11 KB
Datasheet
IRGP4063PBF-InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRGP4063-EPBF, IRGP4063PBF.
Please refer to the document for exact specifications by model.

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📌 All Tags

INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRGP4063-EPBF-like datasheet