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IRGP430U INSULATED GATE BIPOLAR TRANSISTOR

IRGP430U Description

Previous Datasheet Index Next Data Sheet PD - 9.780A IRGP430U INSULATED GATE BIPOLAR TRANSISTOR .
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, whil.

IRGP430U Features

* Switching-loss rating includes all "tail" losses

IRGP430U Applications

* TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter

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Datasheet Details

Part number
IRGP430U
Manufacturer
IRF
File Size
256.41 KB
Datasheet
IRGP430U_IRF.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR IRF
IRF IRGP430U-like datasheet