IRGP4062D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRGP4062D-EPbF
Manufacturer	International Rectifier
File Size	430.21 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4062D-EPbF-InternationalRectifier.pdf

C.
Low VCE (ON) Trench IGBT Technology.
Low switching losses.
Maximum Junction temperature 175 °C.
5 μS short circuit SOA.
Square RBSOA G.
100% of the parts tested for ILM .
Positive VCE (ON) Temperature co-efficient.
Ultra fast soft Recovery Co-Pak Diode E n-channel.
Tight parameter distribution.
Lead Free Package C VCES = 600V IC = 24A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65.

📁 IRGP4062D-EPbF Similar Datasheet

Other Datasheets by International Rectifier

Published: Nov 14, 2014 |