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IRGP4063DPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGP4063DPBF Description

IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRGP4063DPBF Features

* Low VCE (ON) Trench IGBT Technology
* Low switching losses
* Maximum Junction temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA
* 100% of the parts tested for 4X rated current (ILM)
* Positive VCE (ON) Temperature co-efficient

IRGP4063DPBF Applications

* Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
* Rugged transient Performance for increased reliability
* Excellent Current sharing in parallel operation
* Low EMI C E GC IRGP4063DPbF G E C G IRGP4063D-EPbF G Gate

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRGP4063DPBF-like datasheet