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IRGP4069D-EPbF, IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR

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Description

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGP4069D-EPbF .

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This datasheet PDF includes multiple part numbers: IRGP4069D-EPbF, IRGP4069DPbF. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRGP4069D-EPbF, IRGP4069DPbF
Manufacturer
International Rectifier
File Size
303.95 KB
Datasheet
IRGP4069DPbF-InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRGP4069D-EPbF, IRGP4069DPbF.
Please refer to the document for exact specifications by model.

Features

* Low VCE (ON) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction Temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA
* 100% of The Parts Tested for ILM
* Positive VCE (ON) Temperature Coefficient
* Tight Parameter

Applications

* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Transient Performance for Increased Reliability
* Excellent Current Sharing in Parallel Operation Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100

IRGP4069D-EPbF Distributors

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