Description
INSULATED GATE BIPOLAR TRANSISTOR .
Features
* Low VCE (ON) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction Temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA
* 100% of The Parts Tested for ILM
* Positive VCE (ON) Temperature Coefficient
* Tight Parameter
Applications
* Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
* Rugged Transient Performance for Increased Reliability
* Excellent Current Sharing in Parallel Operation
CC
GC E
TO-247AC IRGP4069PbF
GC E
TO-247AD IRGP4069-EPbF
G Gate
C
