IRG7PSH73K10PbF INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

INSULATED GATE BIPOLAR TRANSISTOR .

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IRG7PSH73K10PbF Datasheet Preview — Preview of IRG7PSH73K10PbF PDF

Datasheet Specifications

Part number: IRG7PSH73K10PbF
Manufacturer: International Rectifier
File Size: 384.62 KB
Datasheet: IRG7PSH73K10PbF-InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (ON) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction Temperature 175 °C
* 10 μS short Circuit SOA
* Square RBSOA
* 100% of The Parts Tested for ILM
* Positive VCE (ON) Temperature Coefficient
* Tight Parameter

Applications

* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Transient Performance for Increased Reliability
* Excellent Current Sharing in Parallel Operation PD - 97406A IRG7PSH73K10PbF C G E n-channel VCES = 1200V IC(Nominal)

IRG7PSH73K10PbF Distributors

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IRG7PSH73K10PbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRG7PSH73K10PbF-like datasheet