Datasheet Specifications
- Part number
- IRG7PSH54K10DPbF
- Manufacturer
- International Rectifier
- File Size
- 827.59 KB
- Datasheet
- IRG7PSH54K10DPbF_InternationalRectifier.pdf
- Description
- Insulated Gate Bipolar Transistor
Description
IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 65A, TC =100°C tSC 10µs, TJ(max) = 150°C .
Features
* Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PSH54K10DPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TApplications
* Industrial Motor DriveIRG7PSH54K10DPbF Distributors
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