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IRG7PSH50UDPbF INSULATED GATE BIPOLAR TRANSISTOR

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Description

PD - 97548 IRG7PSH50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

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Features

* Low VCE (ON) trench IGBT technology
* Low switching losses C
* Square RBSOA
* 100% of the parts tested for ILM 
* Positive VCE (ON) temperature co-efficient
* Ultra fast soft recovery co-pak diode G
* Tight parameter distribution

Applications

* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged transient performance for increased reliability
* Excellent current sharing in parallel operation Applications
* U. P. S.
* Welding
* Solar Inv

IRG7PSH50UDPbF Distributors

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