IRF1010ES Power MOSFET

International Rectifier

Description

PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operatin.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon.

📥 Download Datasheet

IRF1010ES Datasheet Preview — Preview of IRF1010ES PDF

Datasheet Specifications

Part number: IRF1010ES
Manufacturer: International Rectifier
File Size: 123.94 KB
Datasheet: IRF1010ES_InternationalRectifier.pdf
Description: Power MOSFET

Features

* rop Ripple ≤ 5% [ ISD ]
* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www. irf. com 7 IRF1010ES/IRF1010EL D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2

Applications

* The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection

IRF1010ES Distributors

📁 Related Datasheet

IRF1010EZ IRF1010EZS IRF1010 IRF1010N IRF1010NS IRF1010ZS

📌 All Tags

IRF1010ES Power MOSFET International Rectifier

International Rectifier IRF1010ES-like datasheet