IRF1010EL Power MOSFET

International Rectifier

Description

PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operatin.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon.

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Datasheet Specifications

Part number: IRF1010EL
Manufacturer: International Rectifier
File Size: 123.94 KB
Datasheet: IRF1010EL_InternationalRectifier.pdf
Description: Power MOSFET

Features

* rop Ripple ≤ 5% [ ISD ]
* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www. irf. com 7 IRF1010ES/IRF1010EL D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2

Applications

* The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection

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IRF1010EL Power MOSFET International Rectifier

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