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IRF1010N N-Channel MOSFET

IRF1010N Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010N， IIRF1010N *.

IRF1010N Features

* Static drain-source on-resistance: RDS(on) ≤11mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF1010N Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 85 IDM Drain Current-Single Pulsed 290 PD Total Dissipation @TC=25℃ 180 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

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Datasheet Details

Part number
IRF1010N
Manufacturer
INCHANGE
File Size
241.70 KB
Datasheet
IRF1010N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRF1010N-like datasheet