Description
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Le.
l l
IRF1010NSPbF IRF1010NLPbF
HEXFET® Power MOSFET
D
PD - 95103
VDSS = 55V RDS(on) = 11mΩ
G S
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 1.
Features
* +
RG VGS
* dv/dt controlled by RG
* ISD controlled by Duty Factor "D"
* D. U. T. - Device Under Test
+ VDD
* Reverse Polarity of D. U. T for P-Channel
http://www. DataSheet4U. net/
Driver Gate Drive P. W. Period D=
P. W. Period
[VGS=10V ]
* D. U
Applications
* because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1010NL) is available for lowprofile applications. Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques t
