IRF1010NS Power MOSFET

International Rectifier

Description

PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanch.
l l HEXFET® Power MOSFET D IRF1010NS IRF1010NL VDSS = 55V RDS(on) = 11mΩ G S Advanced HEXFET ® Power MOSFETs from International Rectifier utilize.

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Datasheet Specifications

Part number: IRF1010NS
Manufacturer: International Rectifier
File Size: 146.83 KB
Datasheet: IRF1010NS_InternationalRectifier.pdf
Description: Power MOSFET

Features

* t [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD]
* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www. irf. com 7 IRF1010NS/IRF1010NL D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) M

Applications

* The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection

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IRF1010NS Power MOSFET International Rectifier

International Rectifier IRF1010NS-like datasheet