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IRF1010EZS N-Channel MOSFET

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Description

Isc N-Channel MOSFET Transistor IRF1010EZS *.

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Datasheet Specifications

Part number
IRF1010EZS
Manufacturer
INCHANGE
File Size
253.81 KB
Datasheet
IRF1010EZS-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 80 60 340 PD Total Dissipation @TC=25℃ 140 Tch Max. Operating Ju

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