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IRF1010ELPbF HEXFET Power MOSFET

IRF1010ELPbF Description

PD - 95444 Advanced Process Technology l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switch.
l IRF1010ESPbF IRF1010ELPbF HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G S Advanced HEXFET® Power MOSFETs from International Rectifier utili.

IRF1010ELPbF Features

* Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www. irf. com 7 IRF1010ES/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" Not

IRF1010ELPbF Applications

* The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection

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HEXFET Power MOSFET International Rectifier
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