Datasheet4U Logo Datasheet4U.com

IRF1010NS N-Channel MOSFET

IRF1010NS Description

isc N-Channel MOSFET Transistor *.

IRF1010NS Features

* With TO-263( D2PAK ) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IRF1010NS
* APPL

IRF1010NS Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 85 60 290 PD Total Dissipation 180 Tj Operati

📥 Download Datasheet

Preview of IRF1010NS PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRF1010NS
Manufacturer
INCHANGE
File Size
247.93 KB
Datasheet
IRF1010NS-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • IRF1010NSPBF - Power MOSFET (International Rectifier)
  • IRF1010N - Power MOSFET (International Rectifier)
  • IRF1010NL - Power MOSFET (International Rectifier)
  • IRF1010NLPBF - Power MOSFET (International Rectifier)
  • IRF1010NPBF - Power MOSFET (International Rectifier)
  • IRF1010 - N-Channel Power MOSFET (nELL)
  • IRF1010E - Power MOSFET (International Rectifier)
  • IRF1010EL - Power MOSFET (International Rectifier)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE IRF1010NS-like datasheet