PTVA127002EV - Thermally-Enhanced High Power RF LDMOS FET

Infineon

Datasheet Details

Part number	PTVA127002EV
Manufacturer	Infineon
File Size	518.11 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTVA127002EV-Infineon.pdf

The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band.

include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA127002EV Package H-36275-4 POUT (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 300 mA, TCASE = 25°C, 300 µs pulse width, 12% duty cycle 65 Output Power 55 65 55 45 45 35 35 25 1200 MHz 25 Efficiency 1300 MHz 15 1400 MHz a127002ev_g1-1 15 30 32 34 36 38 40 42.

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Published: Jan 26, 2016 |