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PTVA084007NF - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTVA084007NF is a 370-watt (P3dB) LDMOS FET manufactured with Wolfspeed’s 48-V LDMOS process.

It is designed for use in multi-standard cellular power amplifier applications.

Features

  • a single-ended design and input and output matching that allow for use from 755 MHz to 805 MHz. Package Types: PG-HBSOF-4-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 800 mA, ƒ = 805 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 28 60 Gain 24 40 20 20 16 0 Efficiency 12 -20 8 4 25 -40 PAR @ 0.01% CCDF 30 35 40 45 ptva084007nf_g1 -60 50 55 Average Output Power (dBm) Features.
  • Broadband internal input and ou.

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Datasheet Details

Part number PTVA084007NF
Manufacturer Wolfspeed
File Size 490.65 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTVA084007NF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTVA084007NF Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 – 805 MHz Description The PTVA084007NF is a 370-watt (P3dB) LDMOS FET manufactured with Wolfspeed’s 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single-ended design and input and output matching that allow for use from 755 MHz to 805 MHz. Package Types: PG-HBSOF-4-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 800 mA, ƒ = 805 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 28 60 Gain 24 40 20 20 16 0 Efficiency 12 -20 8 4 25 -40 PAR @ 0.