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PTVA042502FC - Thermally-Enhanced High Power RF LDMOS FET

This page provides the datasheet information for the PTVA042502FC, a member of the PTVA042502EC Thermally-Enhanced High Power RF LDMOS FET family.

Datasheet Summary

Description

The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band.

Features

  • include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. Efficiency (%), Gain (dB) IMD Shoulder (dBc) DVB-T Performance Efficiancy, Gain and IMD3 Shoulder vs Frequency VDD = 50 V, IDQ = 800 mA, POUT = 55 W avg 35 -23 30 -25 Efficiency 25 -27 20 Gain -29 15 -31 IMDASChPoRulder 10 ptva042502fc_g1 -33 450 500 550 600 650 700 750 800 85.

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Datasheet preview – PTVA042502FC

Datasheet Details

Part number PTVA042502FC
Manufacturer Infineon
File Size 357.34 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTVA042502FC Datasheet
Additional preview pages of the PTVA042502FC datasheet.

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Full PDF Text Transcription

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PTVA042502EC PTVA042502FC Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 – 806 MHz Description The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
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