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PTVA092407NF - Thermally-Enhanced High Power RF LDMOS FET

Datasheet Summary

Description

The PTVA092407NF is a 240-watt LDMOS FET manufactured with Wolfspeed’s 48-V LDMOS process.

It is designed for use in multi-standard cellular power amplifier applications.

Features

  • a single ended design and input and output matching that allow for use from 869 MHz to 960 MHz. Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Package Types: PG-HBSOF-4-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 900 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 20 Gain 40 16 20 Efficiency 12 0 8 -20 PAR @ 0.01% CCDF 4.

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Datasheet Details

Part number PTVA092407NF
Manufacturer Wolfspeed
File Size 701.90 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTVA092407NF Datasheet
Additional preview pages of the PTVA092407NF datasheet.

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Full PDF Text Transcription

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PTVA092407NF Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 869 – 960 MHz Description The PTVA092407NF is a 240-watt LDMOS FET manufactured with Wolfspeed’s 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design and input and output matching that allow for use from 869 MHz to 960 MHz. Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Package Types: PG-HBSOF-4-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 900 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 20 Gain 40 16 20 Efficiency 12 0 8 -20 PAR @ 0.
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