PTVA035002EV - Thermally-Enhanced High Power RF LDMOS FET

Infineon

Datasheet Details

Part number	PTVA035002EV
Manufacturer	Infineon
File Size	366.93 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTVA035002EV-Infineon.pdf

The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band.

include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA035002EV Package H-36275-4 Gain (dB) Drain Efficiency (%) Pulsed CW Performance 450 MHz, VD = 50 V, IDQ = 0.5 A, 12 µsec pulse width, 10% duty cycle 22 85 20 Gain 18 75 65 16 55 14 Efficiency 12 45 35 10 48 a035002 gr 1 25 50 52 54 56 58 60 Output Power (dBm) Features.

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Published: Nov 27, 2016 |