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PTVA120251EA - 25W High Power RF LDMOS FET

Datasheet Summary

Description

The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band.

Features

  • include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE = 25°C 300 µs pulse width, 12% duty cycle 60 70 Efficiency 55 60 Output Power (dBm) Drain Efficiency (%) 50 45 40 35 30 18 50 Output Power 40 1200 MHz 1300 MHz 30 1400 MHz 1200 MHz 1300 Mhz 20 1400 MHz a120251ea-v2-gr1a``` 10 22 26.

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Datasheet Details

Part number PTVA120251EA
Manufacturer MACOM
File Size 836.28 KB
Description 25W High Power RF LDMOS FET
Datasheet download datasheet PTVA120251EA Datasheet
Additional preview pages of the PTVA120251EA datasheet.

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Full PDF Text Transcription

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PTVA120251EA Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Description The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
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