PTVA104501EH - Thermally-Enhanced High Power RF LDMOS FET

Infineon

Datasheet Details

Part number	PTVA104501EH
Manufacturer	Infineon
File Size	305.04 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTVA104501EH-Infineon.pdf

The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band.

include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA104501EH Package H-33288-2 POUT (dBm) Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 200 mA, TCASE = 25°C, 128 µs pulse width, 10% duty cycle 65 Output power Efficiency 55 65 55 45 45 35 960 MHz 35 1030 Mhz 25 1090 MHz 25 1150 MHz 1215 MHz 15 a104501eh_g1 15 28 30 32 3.

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Published: Nov 27, 2016 |