PTVA030121EA - Thermally-Enhanced High Power RF LDMOS FET

Infineon

Datasheet Details

Part number	PTVA030121EA
Manufacturer	Infineon
File Size	313.61 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTVA030121EA-Infineon.pdf

The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band.

include high gain and a thermally-enhanced package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA030121EA Package H-36265-2 Gain (dB) Drain Efficiency (%) CW Power Sweep VDD = 50 V, IDQ = 30 mA, ƒ = 450 MHz 28 26 Gain 24 22 20 18 16 14 31 Efficiency 33 35 37 39 Output Power (dBm) 41 90 80 70 60 50 40 30 3-1 20 43 Features.
Unmatched input and output.
Integrated ESD protecti.

📁 PTVA030121EA Similar Datasheet

PTVA082407NF - Thermally-Enhanced High Power RF LDMOS FET (MACOM)
PTVA084007NF - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PTVA092407NF - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PTVA120251EA - 25W High Power RF LDMOS FET (MACOM)
PTVA120252MT - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PTVA120501EA - 50W High Power RF LDMOS FET (MACOM)
PTV03010 - DC-DC CONVERTERS (Artesyn)
PTV03010W - 3.3-V INPUT NONISOLATED WIDE-OUTPUT ADJUST SIP MODULE (Texas Instruments)

Other Datasheets by Infineon

Published: Mar 25, 2016 |