PTVA042502EC - Thermally-Enhanced High Power RF LDMOS FET

Infineon

Datasheet Details

Part number	PTVA042502EC
Manufacturer	Infineon
File Size	357.34 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTVA042502EC-Infineon.pdf

The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band.

include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. Efficiency (%), Gain (dB) IMD Shoulder (dBc) DVB-T Performance Efficiancy, Gain and IMD3 Shoulder vs Frequency VDD = 50 V, IDQ = 800 mA, POUT = 55 W avg 35 -23 30 -25 Efficiency 25 -27 20 Gain -29 15 -31 IMDASChPoRulder 10 ptva042502fc_g1 -33 450 500 550 600 650 700 750 800 85.

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Published: Jan 26, 2016 |