PTVA047002EV - Thermally-Enhanced High Power RF LDMOS FET

Infineon

Datasheet Details

Part number	PTVA047002EV
Manufacturer	Infineon
File Size	345.07 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTVA047002EV-Infineon.pdf

The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band.

include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA047002EV Package H-36275-4 Drain Efficiency (%), Gain (dB) DVB-T Performance Drain Efficiency, Gain vs Frequency VDD= 50 V, IDQ = 1.2 A, POUT = 135 W avg 34 30 Drain Efficiency 26 22 18 Gain 14 ptva047002ev_g5 450 500 550 600 650 700 750 800 850 Frequency (MHz) Features.
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Published: Feb 3, 2016 |