PTVA123501EC - Thermally-Enhanced High Power RF LDMOS FETs

Infineon

Datasheet Details

Part number	PTVA123501EC
Manufacturer	Infineon
File Size	611.19 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTVA123501EC-Infineon.pdf

The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band.

include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTVA123501EC Package H-36248-2 PTVA123501FC Package H-37248-2 Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 300 µs pulse width, 12% duty cycle POUT (dBm) Drain Efficiency (%) 60 80 55 Output Power 50 70 60 45 50 40 35 30 30 Efficiency 32 34 36 1200 MHz 40 1.

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Published: Feb 3, 2016 |